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MCM69P735ZP3R bảng dữ liệu(PDF) 8 Page - Motorola, Inc

tên linh kiện MCM69P735ZP3R
Giải thích chi tiết về linh kiện  128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
PDF  16 Pages
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM69P735ZP3R bảng dữ liệu(HTML) 8 Page - Motorola, Inc

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MCM69P735
8
MOTOROLA FAST SRAM
AC OPERATING CONDITIONS AND CHARACTERISTICS
(3.6 V
≥ VDD ≥ 3.135 V, 70°C ≥ TA ≥ 0°C, Unless Otherwise Noted)
Input Timing Measurement Reference Level
1.5 V
. . . . . . . . . . . . . . .
Input Pulse Levels
0 to 3.0 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input Slew Rate (See Note 1)
1.0 V/ns
. . . . . . . . . . . . . . . . . . . . . . . . .
Output Timing Reference Level
1.5 V
. . . . . . . . . . . . . . . . . . . . . . . . . .
Output Load
See Figure 2 Unless Otherwise Noted
. . . . . . . . . . . . . .
Output Rise/Fall Times (Max)
2.0 ns
. . . . . . . . . . . . . . . . . . . . . . . . . . .
READ/WRITE CYCLE TIMING (See Notes 1 and 2)
P
Sb l
MCM69P735–2.5
200 MHz
MCM69P735–3
180 MHz
MCM69P735–3.5
166 MHz
Ui
N
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Unit
Notes
Cycle Time
tKHKH
5
—
5.5
—
6
—
ns
Clock High Pulse Width
tKHKL
2.2
—
2.5
—
2.7
—
ns
3, 4
Clock Low Pulse Width
tKLKH
2.2
—
2.5
—
2.7
—
ns
3, 4
Clock Access Time
tKHQV
—
2.5
—
3.0
—
3.5
ns
3
Output Enable to Output Valid
tGLQV
—
3.5
—
3.5
—
3.8
ns
3
Clock High to Output Active
tKHQX1
0
—
0
—
0
—
ns
3, 5, 6
Clock High to Output Change
tKHQX2
1.5
—
1.5
—
1.5
—
ns
3, 6
Output Enable to Output Active
tGLQX
0
—
0
—
0
—
ns
3, 5, 6
Output Disable to Q High–Z
tGHQZ
—
3.5
—
3.5
—
3.8
ns
3, 5, 6
Clock High to Q High–Z
tKHQZ
1.5
5
1.5
5.5
1.5
6
ns
3, 5, 6
Setup Times:
Address
Data In
Write
Chip Enable
ADSP, ADSC, ADV
tADKH
tDVKH
tWVKH
tEVKH
tADSKH
0.5
0.5
0.5
0.5
1.5
—
0.5
0.5
0.5
0.5
1.5
—
0.5
0.5
0.5
0.5
1.5
—
ns
3
Hold Times:
Address
ADSP, ADSC, ADV
Data In
Write
Chip Enable
tKHAX
tKHADSX
tKHDX
tKHWX
tKHEX
1.0
—
1.0
—
1.0
—
ns
3
NOTES:
1. Write is defined as either any SBx and SW low or SGW is low. Chip Enable is defined as SE1 low, SE2 high and SE3 low whenever ADSP
or ADSC is asserted.
2. All read and write cycle timings are referenced from K or G.
3. Tested per AC Test Load, Figure 2.
4. In order to reduce test correlation issues and to reduce the effects of application specific input edge rate variations on correlation between
data sheet parameters and actual system performance, FSRAM AC parametric specifications are always specified at VDDQ/2. In some
design exercises, it is desirable to evaluate timing using other reference levels. Since the maximum test input edge rate is known and is given
in the AC Test Conditions section of the data sheet as 1 V/ns, one can easily interpolate timing values to other reference levels.
5. Measured at
± 200 mV from steady state.
6. This parameter is sampled and not 100% tested.



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