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MCM69P735ZP3R bảng dữ liệu(PDF) 7 Page - Motorola, Inc

tên linh kiện MCM69P735ZP3R
Giải thích chi tiết về linh kiện  128K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
PDF  16 Pages
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MCM69P735ZP3R bảng dữ liệu(HTML) 7 Page - Motorola, Inc

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MCM69P735
7
MOTOROLA FAST SRAM
DC OPERATING CONDITIONS AND CHARACTERISTICS
(3.6 V
≥ VDD ≥ 3.135 V, 70°C ≥ TA ≥ 0°C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VDD
3.135
3.3
3.6
V
I/O Supply Voltage
VDDQ
2.375
3.3
VDD
V
Ambient Temperature
TA
0
—
70
°C
Input Low Voltage
VIL
– 0.3
—
0.8
V
Input High Voltage
VIH
2.0
—
VDD + 0.3
V
VIH
20% tKHKH (MIN)
VSS
VSS – 1.0 V
Figure 1. Undershoot Voltage
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Typ
Max
Unit
Notes
Input Leakage Current (0 V
≤ Vin ≤ VDD)
Ilkg(I)
—
—
± 1
µA
1
Output Leakage Current (0 V
≤ Vin ≤ VDDQ)
Ilkg(O)
—
—
± 1
µA
AC Supply Current (Device Selected,
MCM69P735–2.5
All Outputs Open, Freq = Max)
MCM69P735–3
Includes VDD and VDDQ
MCM69P735–3.5
IDDA
—
—
475
450
425
mA
2, 3, 4
CMOS Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at CMOS Levels Vin ≤ VSS + 0.2 V
or
≥ VDD – 0.2 V)
ISB2
—
—
40
mA
5
TTL Standby Supply Current (Device Deselected, Freq = 0,
VDD = Max, All Inputs Static at Vin ≤ VIL or ≥ VIH)
ISB3
—
—
45
mA
5
Clock Running (Device Deselected,
MCM69P735–2.5
Freq = Max, VDD = Max, All Inputs Toggling at
CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V)
ISB4
—
—
190
mA
5
Static Clock Running (Device Deselected,
MCM69P735–2.5
Freq = Max, VDD = Max, All Inputs Static at Vin ≤ VIL or ≥ VIH)
ISB5
—
—
85
mA
5
Output Low Voltage (IOL = 2 mA) VDDQ = 2.5 V
VOL1
—
—
0.7
V
Output High Voltage (IOH = – 2 mA) VDDQ = 2.5 V
VOH1
1.7
—
—
V
Output Low Voltage (IOL = 8 mA) VDDQ = 3.3 V
VOL2
—
—
0.4
V
Output High Voltage (IOH = – 4 mA) VDDQ = 3.3 V
VOH2
2.4
—
—
V
NOTES:
1. LBO pin has an internal pullup and will exhibit leakage currents of
± 5 µA.
2. Reference AC Operating Conditions and Characteristics for input and timing (VIH/VIL, tr /tf, pulse level 0 to 3.0 V).
3. All addresses transition simultaneously low (LSB) and then high (MSB).
4. Data states are all zero.
5. Device in Deselected mode as defined by the Truth Table.
CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, 70
°C ≥ TA ≥ 0°C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Min
Typ
Max
Unit
Input Capacitance
Cin
—
4
5
pF
Input/Output Capacitance
CI/O
—
7
8
pF



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