UF3710L-TQ2-R datasheet(2/6 Pages) UTC

2 / 6 page

UF3710

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R203-036.E

ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Gate-Source Voltage

VGSS

±20

Drain-Source Voltage

VDSS

100

Drain Current

Continuous (VGS=10V)

Pulsed (Note 2)

IDM

230

Avalanche Current (Note 2)

IAR

Avalanche Energy

Repetitive(Note 2)

EAR

Single Pulsed(Note 3)

EAS

1060 (Note 4)

Power Dissipation

165

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note:1.

Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

Pulse width limited by TJ(MAX)

TJ=25°C, L=0.65mH, RG=25Ω, IAS=57A, VGS=10V

This is a typical value at device destruction and represents operation outside rated limits.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

℃

Junction to Case

θJC

0.75

℃

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250μA

100

Drain-Source Leakage Current

IDSS

VDS=100V, VGS=0V

μA

Gate-Source Leakage Current

IGSS

VGS=±20V, VDS=0V

±100

Breakdown Voltage Temperature Coefficient

△

DSS/△TJ ID=1mμA,Referenced to 25℃

0.13

V/°C

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250μA

2.0

4.0

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=28A (Note)

mΩ

Forward Transconductance

gFS

VDS=25V, ID=28 A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V, VGS=0V, f =1MHz

3130

Output Capacitance

COSS

410

Reverse Transfer Capacitance

CRSS

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