UF730

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 6

www.unisonic.com.tw

QW-R502-077.E

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

400

V

Gate-Source Voltage

±20

V

Continuous Drain Current

5.5

A

Pulsed Drain Current (Note 1)

22

A

Single Pulse Avalanche Energy (Note 2)

300

mJ

TO-220

73

TO-220F

38

Power Dissipation

TO-251 / TO-252

48

W

Junction Temperature

+150

°

C

Storage Temperature

-55 ~ +150

°

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

TO-220

62.5

TO-220F

62.5

Junction-to-Ambient

TO-251 / TO-252

110

°

C/W

TO-220

1.71

TO-220F

3.31

Junction-to-Case

TO-251 / TO-252

2.6

°

C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

400

V

On-State Drain Current (Note 3)

5.5

A

Drain-Source Leakage Current

25

μA

Gate-Source Leakage Current

±100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

0.8

1.0

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

600

pF

Output Capacitance

150

pF

Reverse Transfer Capacitance

40

pF

SWITCHING CHARACTERISTICS

Turn-On Delay Time

10

17

ns

Turn-On Rise Time

20

29

ns

Turn-Off Delay Time

35

56

ns

Turn-Off Fall Time

15

24

ns

Total Gate Charge

20

35

nC

Gate-Source Charge

3.0

nC

Gate-Drain Charge

10

nC