R5F5630ACDFB datasheet(154/165 Pages) RENESAS

154 / 165 page

R01DS0060EJ0100 Rev.1.00

Page 154 of 168

Sep 13, 2011

RX630 Group

5. Electrical Characteristics

5.12

ROM (Flash Memory for Code Storage) Characteristics

Note 1. Definition of reprogram/erase cycle:

The reprogram/erase cycle is the number of erasing for each block. When the reprogram/erase cycle is n times (n = 1000),

erasing can be performed n times for each block. For instance, when 256-byte programming is performed 16 times for different

addresses in 4-Kbyte block and then the entire block is erased, the reprogram/erase cycle is counted as one. However,

programming the same address for several times as one erasing is not enabled (overwriting is prohibited).

Note 2. This indicates the minimum number that guarantees the characteristics after reprogramming. (The guaranteed value is in the

range from one to the minimum number.)

Note 3. This indicates the characteristic when reprogram is performed within the specification range including the minimum number.

Table 5.29

ROM (Flash Memory for Code Storage) Characteristics

Conditions: VCC = AVCC0 = VCC_USB = 2.7 to 3.6 V, VREFH/VREFH0 = 2.7 V to AVCC0

VSS = AVSS0 = VREFL/VREFL0 = VSS_USB = 0 V

Temperature range for the programming/erasure operation: Ta = Topr

Item

Symbol

FCLK = 4 MHz

20 MHz

≤ FCLK ≤ 50 MHz

Unit

Min.

Typ.

Max.

Min.

Typ.

Max.

Programming time

NPEC  100 hours

128 bytes

tP128

—

2.8

—

4 Kbytes

tP4K

—

140

—

16 Kbytes

tP16K

—

252

560

—

200

Programming time

NPEC > 100 hours

128 bytes

tP128

—

3.4

33.6

—

1.2

4 Kbytes

tP4K

—

75.6

168

—

27.6

16 Kbytes

tP16K

—

302.4

672

—

108

240

Erasure time

NPEC  100 hours

4 Kbytes

tE4K

—

120

—

16 Kbytes

tE16K

—

200

480

—

100

240

Erasure time

NPEC > 100 hours

4 Kbytes

tE4K

—

144

—

16 Kbytes

tE16K

—

240

576

—

120

288

Reprogram/erase cycle*1

NPEC

1000*2

—

1000*2

——

Times

Suspend delay time during programming

tSPD

—

400

—

120

μs

First suspend delay time during erasing

(in suspend priority mode)

tSESD1

—

300

—

120

μs

Second suspend delay time during erasing

(in suspend priority mode)

tSESD2

——

1.7

—

—1.7

Suspend delay time during erasing

(in erasure priority mode)

tSEED

——

1.7

—

—1.7

Data hold time*3

tDRP

—

Year

FCU reset time

tFCUR

—

μs

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