BFP720ESD

Product Brief

Data Sheet

8

Revision 1.0, 2010-06-29

2

Product Brief

The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor

(HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection

circuits, which enhance robustness against ESD and high RF input power strongly. The device combines

robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of

wireless applications.

The BFP720ESD is especially well-suited for portable battery-powered applications in which reduced power

consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

Table 1

Quick Reference DC Characteristics at

T

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Collector emitter breakdown voltage

V

(BR)CEO

4.2

4.7

–

V

I

Open base

Collector base leakage current

I

CBO

––

400

nA

V

Open emitter

DC current gain

h

FE

160

250

400

V

Collector current

I

C

––

30

mA

Total power dissipation

P

tot

––

100

mW

T