V3

MASW-005100-1194

HMIC™ SP5T Silicon PIN Diode Switch

ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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• India Tel: +91.80.43537383

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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

Features

♦ Ultra Broad Bandwidth: 50MHz to 26GHz

♦ 0.9 Insertion Loss , 38dB Isolation at 20GHz

♦ 50nS Switching Speed

♦ Reliable, Fully Monolithic, Glass Encapsulated

Construction

♦ +33dBm Power Handling

♦ RoHS Compliant

Description

The MASW-005100-1194 is a SP4T, series-shunt,

broad band, PIN diode, switch made with M/A-COM

Integrated Circuit) process, US Patent 5,268,310.

This process allows for the incorporation of silicon

pedestals that form the series and shunt diodes or

vias by imbedding them in a low loss, low dispersion

glass. This hybrid combination of silicon and glass

gives HMIC switches exceptional low loss and

remarkable high isolation through low millimeter-

wave frequencies.

Applications

This high performance switch is suitable for use in

multi-band ECM, radar, and instrumentation control

circuits where high isolation to insertion loss ratios

are required. With a standard +5V/-5V, TTL

controlled PIN diode driver, 50nS switching speeds

are achieved.

Absolute Maximum Ratings

Notes:

Exceeding these limits may cause permanent

damage.

Maximum operating conditions for the

combination of RF Power, D.C. Bias, and

temperature: +33dBm, @ 15mA/Diode @ +85°C

Parameter

Value

Operating Temperature

-65°C to +125°C

Storage Temperature

-65°C to +150°C

RF C.W. Incident Power (± 20mA)

+33dBm

Bias Current ( Forward )

± 20mA

Applied Voltage ( Reverse )

-25 Volts