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HT82K70E-L bảng dữ liệu(PDF) 4 Page - Holtek Semiconductor Inc |
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HT82K70E-L bảng dữ liệu(HTML) 4 Page - Holtek Semiconductor Inc |
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4 / 59 page ![]() Absolute Maximum Ratings Supply Voltage ...........................VSS -0.3V to VSS+6.0V Storage Temperature ............................ -50°Cto125°C Input Voltage..............................VSS -0.3V to VDD+0.3V Operating Temperature........................... -40°Cto85°C IOL Total ..............................................................150mA IOH Total............................................................ -100mA Total Power Dissipation .....................................500mW Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability. D.C. Characteristics Ta=25 °C Symbol Parameter Test Conditions Min. Typ. Max. Unit VDD Conditions VDD Operating Voltage (Crystal OSC) ¾ fSYS=4MHz 1.8 ¾ 5.5 V fSYS=8MHz 3.3 ¾ 5.5 V IDD Operating Current (Crystal OSC) 3V No load, fSYS=6MHz ¾ 12 mA ISTB1 Standby Current 3V No load, system HALT, WDT Enabled ¾¾ 20 mA ISTB2 Standby Current 3V No load, system HALT, WDT Disabled ¾¾ 5 mA VIL1 Input Low Voltage for I/O, TMR and INT ¾¾ 0 ¾ 0.3VDD V VIH1 Input High Voltage for I/O, TMR and INT ¾¾ 0.7VDD ¾ VDD V VIL2 Input Low Voltage (RES) ¾¾ 0 ¾ 0.4VDD V VIH2 Input High Voltage (RES) ¾¾ 0.9VDD ¾ VDD V IOL I/O Port Sink Current 3V VOL=0.1VDD 4 ¾¾ mA IOH I/O Port Source Current 3V VOH=0.9VDD -2.5 -4.5 ¾ mA RPH Pull-high Resistance 3V ¾ 10 30 50 k W HT82K70E-L/HT82K70A-L/HT82K76E-L Rev. 1.20 4 February 1, 2011 |
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