ZXMP10A13F datasheet(4/7 Pages) DIODES

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ZXMP10A13F

SEMICO NDUC TORS

ISSUE 1 - MARCH 2005

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS

-100

ID= -250 A, VGS=0V

Zero Gate Voltage Drain Current

IDSS

-1.0

AVDS= -100V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS=±20V, VDS=0V

Gate-Source Threshold Voltage

VGS(th)

-2.0

-4.0

ID= -250 A, VDS=VGS

Static Drain-Source On-State

Resistance

(1)

RDS(on)

1.45

VGS= -10V, ID= -0.6A

VGS= -6V, ID= -0.5A

Forward Transconductance

(1)(3)

gfs

1.2

VDS= -15V, ID= -0.6A

DYNAMIC

(3)

Input Capacitance

Ciss

141

VDS= -50V, VGS=0V

f=1MHz

Output Capacitance

Coss

13.1

Reverse Transfer Capacitance

Crss

10.8

SWITCHING

(2) (3)

Turn-On Delay Time

td(on)

1.6

VDD= -50V, ID= -1A

RG ≅ 6.0 ,VGS= -10V

Rise Time

2.1

Turn-Off Delay Time

td(off)

5.9

Fall Time

3.3

Gate Charge

1.8

VDS= -50V, VGS= -5V

ID= -0.6A

Total Gate Charge

3.5

VDS= -50V, VGS= -10V

ID= -0.6A

Gate-Source Charge

Qgs

0.6

Gate-Drain Charge

Qgd

1.6

SOURCE-DRAIN DIODE

Diode Forward Voltage

(1)

VSD

-0.85

-0.95

Tj=25°C, IS= -0.75A,

VGS=0V

Reverse Recovery Time

(3)

trr

Tj=25°C, IS= -0.9A,

di/dt=100A/ s

Reverse Recovery Charge

(3)

Qrr

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Pulse width

300ms; duty cycle

2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

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