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ZXMP10A13F bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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ZXMP10A13F bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page ![]() ZXMP10A13F SEMICO NDUC TORS ISSUE 1 - MARCH 2005 2 PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R JA 200 °C/W Junction to Ambient (b) R JA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t 5 sec. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -100 V Gate-Source Voltage VGS ±20 V Continuous Drain Current @ VGS=10V; TA=25°C (b) @VGS=10V; TA=70°C (b) @VGS=10V; TA=25°C (a) ID -0.7 -0.5 -0.6 A A A Pulsed Drain Current (c) IDM -3.1 A Continuous Source Current (Body Diode) (b) IS -1.1 A Pulsed Source Current (Body Diode) (c) ISM -3.1 A Power Dissipation at TA=25°C (a) Linear Derating Factor PD 625 5 mW mW/°C Power Dissipation at TA=25°C (b) Linear Derating Factor PD 806 6.4 mW mW/°C Operating and Storage Temperature Range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS |
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