ZXMN2F30FH datasheet(4/8 Pages) DIODES

4 / 8 page

ZXMN2F30FH

Issue 1 - January 2008

www.zetex.com

Electrical characteristics (at Tamb = 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

ID= 250µA, VGS=0V

Zero Gate Voltage Drain

Current

IDSS

µAV

DS= 20V, VGS=0V

Gate-Body Leakage

IGSS

100

VGS=±12V, VDS=0V

Gate-Source Threshold

Voltage

VGS(th)

0.6

0.9

1.5

ID= 250µA, VDS=VGS

Static Drain-Source

On-State Resistance (*)

NOTES:

(*) Measured under pulsed conditions. Pulse width

≤ 300µs; duty cycle ≤2%.

RDS(on)

0.045

0.065

Ω

VGS= 4.5V, ID= 2.5A

VGS= 2.5V, ID= 2.0A

Forward

Transconductance(*)(†)

gfs

8.6

VDS= 10V, ID= 3A

Dynamic (†)

(†) For design aid only, not subject to production testing.

Input Capacitance

Ciss

452

VDS= 10V, VGS=0V

f=1MHz

Output Capacitance

Coss

102

Reverse Transfer

Capacitance

Crss

Switching (‡)(†)

(‡) Switching characteristics are independent of operating junction temperature.

Turn-On-Delay Time

td(on)

2.9

VDD= 10V, VGS= 4.5V

ID= 1A

RG ≈ 6.0Ω

Rise Time

5.6

Turn-Off Delay Time

td(off)

19.4

Fall Time

10.2

Total Gate Charge

4.8

VDS= 10V, VGS= 4.5V

ID= 3.5A

Gate-Source Charge

Qgs

1nC

Gate Drain Charge

Qgd

1.2

Source-drain diode

Diode Forward Voltage(*)

VSD

0.75

1.2

IS= 1.25A, VGS=0V

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