ZXMN2F30FH datasheet(2/8 Pages) DIODES

2 / 8 page

ZXMN2F30FH

Issue 1 - January 2008

www.zetex.com

Absolute maximum ratings

Thermal resistance

NOTES:

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air

conditions.

(b) For a device surface mounted on FR4 PCB measured at t

≤ 5 sec.

µs - pulse width limited by maximum junction

temperature.

(d) Thermal resistance from junction to solder-point (at the end of the drain lead).

Parameter

Symbol

Limit

Unit

Drain source voltage

VDSS

Gate source voltage

VGS

±12

Continous Drain Current @ VGS=4.5; TA=25°C(b)

@ VGS=4.5; TA=70°C(b)

@ VGS=4.5; TA=25°C(a)

4.9

4.0

4.1

Pulsed drain current(c)

IDM

22.6

Continuous source current (body diode)(b)

1.6

Pulsed source current (body diode)(c)

ISM

22.6

Power dissipation at TA =25°C(a)

Linear derating factor

0.96

7.6

mW/

°C

Power dissipation at TA =25°C(b)

Linear derating factor

1.4

11.2

mW/

°C

Operating and storage temperature range

Tj, Tstg

-55 to 150

°C

Parameter

Symbol

Limit

Unit

Junction to ambient(a)

R JA

131

°C/W

Junction to ambient(b)

R JA

°C/W

Junction to Lead(d)

R JL

°C/W

ZXMN2F30FH bảng dữ liệu(PDF) 2 Page - Diodes Incorporated

ZXMN2F30FH bảng dữ liệu(HTML) 2 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7 8

bảng dữ liệu tải về

Link URL