 |
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
|
công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
DMN2114SN bảng dữ liệu(PDF) 1 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN2114SN bảng dữ liệu(HTML) 1 Page - Diodes Incorporated |
|
|
1 / 4 page  DMN2114SN Document number: DS30829 Rev. 4 - 2 1 of 4 www.diodes.com September 2007 © Diodes Incorporated DMN2114SN N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Power Circuits • Lead Free By Design/RoHS Compliant (Note 2) • Qualified to AEC-Q101 Standards for High Reliability • ESD Protected Gate • "Green" Device (Note 3) Mechanical Data • Case: SC-59 • Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020C • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 • Terminal Connections: See Diagram • Marking Information: See Page 3 • Ordering & Date Code Information: See Page 3 • Weight: 0.008 grams (approximate) Source Gate Protection Diode Gate Drain SC-59 ESD protected D G S TOP VIEW TOP VIEW Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage Continuous VGSS ±12 V Drain Current Continuous Pulsed ID 1.2 4.0 A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Total Power Dissipation Pd 500 mW Thermal Resistance, Junction to Ambient RθJA 250 °C /W Operating and Storage Temperature Range Tj, TSTG -55 to +150 °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage BVDSS 20 ⎯ ⎯ V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current @ Tj = 25°C IDSS ⎯ ⎯ 10 μA VDS = 24V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 1) Gate Threshold Voltage VGS(th) 0.7 ⎯ 1.40 V VDS = 10V, ID = 1.0mA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ ⎯ 0.100 0.160 Ω VGS = 4.5V, ID = 0.5A VGS = 2.5V, ID = 0.5A Forward Transfer Admittance |Yfs| ⎯ 3.3 ⎯ S VDS = 10V, ID = 0.5A Diode Forward Voltage VSD ⎯ 0.8 1.1 V VGS = 0V, IS = 1.0A DYNAMIC CHARACTERISTICS Input Capacitance Ciss ⎯ 180 ⎯ pF Output Capacitance Coss ⎯ 120 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 45 ⎯ pF VDS = 10V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) ⎯ 10 ⎯ ns Turn-Off Delay Time tD(OFF) ⎯ 50 ⎯ ns Turn-On Rise Time tr ⎯ 15 ⎯ ns Turn-Off Fall Time tf ⎯ 45 ⎯ ns VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50Ω Notes: 1. Pulse width ≤300μS, duty cycle ≤2%. 2. No purposefully added lead. 3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. |
Số phần tương tự - DMN2114SN |
|
Mô tả tương tự - DMN2114SN |
|
|
|
Link URL |
| Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Liên kết đến bảng dữ liệu | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Vietnamese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
