DVRN6056

Document number: DS30556 Rev. 5 - 2

3 of 5

www.diodes.com

March 2010

© Diodes Incorporated

DVRN6056

NPN Transistor Section (Q1)

1.0

5.0

20

10

30

0.1

10

1.0

50

V,

Capacitance Characteristics

Fig. 3 Typical

f = 1MHz

0.001

0.01

1

10

0.1

100

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I , BASE CURRENT (mA)

Fig. 4 Typical Collector Saturation Region

B

I = 1mA

C

I = 10mA

C

I = 30mA

C

I = 100mA

C

I = 300mA

C

1

10

100

1,000

I , COLLECTOR CURRENT (mA)

Fig. 5 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

C

T = 25°C

A

T = -50°C

A

T = 150°C

A

0

0.1

0.2

0.3

0.4

0.5

I

I

C

B

= 10

1

0.1

10

100

I , COLLECTOR CURRENT (mA)

Fig. 6 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

C

0.2

0.3

0.4

0.6

0.5

0.8

0.7

1.0

0.9

V

= 5V

CE

T = 25°C

A

T = -50°C

A

T = 150°C

A

1

10

100

1,000

110

100

I , COLLECTOR CURRENT (mA)

Fig. 7 Typical Gain-Bandwidth Product vs. Collector Current

C

V

= 5V

CE