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DVRN6056 bảng dữ liệu(PDF) 2 Page - Diodes Incorporated |
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DVRN6056 bảng dữ liệu(HTML) 2 Page - Diodes Incorporated |
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2 / 5 page ![]() DVRN6056 Document number: DS30556 Rev. 5 - 2 2 of 5 www.diodes.com March 2010 © Diodes Incorporated DVRN6056 Electrical Characteristics, NPN Transistor Element (Q1) @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICEX ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V Base Cutoff Current IBL ⎯ 100 nA VCE = 35V, VEB(OFF) = 0.4V ON CHARACTERISTICS (Note 4) DC Current Gain hFE 20 40 80 100 40 ⎯ ⎯ ⎯ 300 ⎯ ⎯ IC = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 150mA, VCE = 1.0V IC = 500mA, VCE = 2.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.40 0.75 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(SAT) 0.75 ⎯ 0.95 1.2 V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Ccb ⎯ 6.5 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Ceb ⎯ 30 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 15 k Ω VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.1 8.0 x 10 -4 Small Signal Current Gain hfe 40 500 ⎯ Output Admittance hoe 1.0 30 μS Current Gain-Bandwidth Product fT 250 ⎯ MHz VCE = 10V, IC = 20mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 15 ns VCC = 30V, IC = 150mA, VBE(off) = 2.0V, IB1 = 15mA Rise Time tr ⎯ 20 ns Storage Time ts ⎯ 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA Fall Time tf ⎯ 30 ns Electrical Characteristics, Zener Element (Z1) @TA = 25°C unless otherwise specified Zener Voltage Range (Note 4) Maximum Zener Impedance Maximum Reverse Leakage Current (Note 4) VZ @ IZT IZT ZZT @ IZT ZZK @ IZK = 0.5mA IR @ VR Nom (V) Min (V) Max (V) mA Ω μA V 5.6 5.49 5.73 5 60 200 1.0 2.5 Notes: 4. Short duration pulse test used to minimize self-heating effect. NPN Transistor Section (Q1) 0 50 100 25 50 75 100 125 150 175 200 T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Total Device) A 150 200 250 300 350 0 400 1 10 1,000 100 0.1 1 10 1,000 100 I , COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current C T = -25°C A T = +25°C A T = 125°C A V = 1.0V CE |
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