P89LPC9331FDH datasheet(67/94 Pages) NXP

67 / 94 page

P89LPC9331_9341_9351_9361

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 5 — 10 January 2011

67 of 94

NXP Semiconductors

P89LPC9331/9341/9351/9361

8-bit microcontroller with accelerated two-clock 80C51 core

[1]

Typical ratings are not guaranteed. The values listed are at room temperature, 3 V.

[2]

The IDD(oper) specification is measured using an external clock with code while(1) {} executed from on-chip flash.

[3]

The IDD(idle) specification is measured using an external clock with no active peripherals, with the following functions disabled: real-time

clock and watchdog timer.

[4]

The IDD(pd) specification is measured using internal RC oscillator with the following functions disabled: comparators, real-time clock, and

watchdog timer.

[5]

The IDD(tpd) specification is measured using an external clock with the following functions disabled: comparators, real-time clock,

brownout detect, and watchdog timer.

[6]

See Section 9 “Limiting values” for steady state (non-transient) limits on IOL or IOH. If IOL/IOH exceeds the test condition, VOL/VOH may

exceed the related specification.

[7]

This specification can be applied to pins which have A/D input or analog comparator input functions when the pin is not being used for

those analog functions. When the pin is being used as an analog input pin, the maximum voltage on the pin must be limited to 4.0 V with

respect to VSS.

[8]

Pin capacitance is characterized but not tested.

[9]

Measured with port in quasi-bidirectional mode.

[10] Measured with port in high-impedance mode.

[11] Port pins source a transition current when used in quasi-bidirectional mode and externally driven from logic 1 to logic 0. This current is

highest when VI is approximately 2 V.

IIL

LOW-level input current

VI =0.4 V

[9] --

−80

μA

ILI

input leakage current

VI =VIL, VIH, or Vth(HL)

[10] --

±1

μA

ITHL

HIGH-LOW transition

current

all ports; VI =1.5 V at

VDD =3.6 V

[11]

−30

−450

μA

RRST_N(int) internal pull-up resistance

on pin RST

pin RST

Vref(bg)

band gap reference voltage

1.19

1.23

1.27

TCbg

band gap temperature

coefficient

-10

ppm/

°C

Table 12.

Static characteristics …continued

VDD = 2.4 V to 3.6 V unless otherwise specified.

Tamb = −40 °Cto+85 °C for industrial applications, −40 °Cto+125 °C extended, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ[1]

Max

Unit

P89LPC9331FDH bảng dữ liệu(PDF) 67 Page - NXP Semiconductors

P89LPC9331FDH bảng dữ liệu(HTML) 67 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94

bảng dữ liệu tải về

Link URL