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MRF9085LSR3 bảng dữ liệu(PDF) 2 Page - Freescale Semiconductor, Inc

tên linh kiện MRF9085LSR3
Giải thích chi tiết về linh kiện  RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
PDF  12 Pages
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nhà sản xuất  FREESCALE [Freescale Semiconductor, Inc]
Trang chủ  http://www.freescale.com
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MRF9085LSR3 bảng dữ liệu(HTML) 2 Page - Freescale Semiconductor, Inc

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4-2
Freescale Semiconductor
RF Product Device Data
MRF9085LR3 MRF9085LSR3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
MRF9085LR3
MRF9085LSR3
M2 (Minimum)
M1 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 μAdc)
VGS(th)
2.0
—
4.0
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 700 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.19
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 6 Adc)
gfs
—
8.0
—
S
Dynamic Characteristics (1)
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
73
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2.9
—
pF
1. Part is internally input matched.
(continued)



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