MRF9085LR3 MRF9085LSR3

4-1

Freescale Semiconductor

RF Product Device Data

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies from 865 to 895 MHz. The high gain and broadband performance

of these devices make them ideal for large-signal, common-source amplifier

applications in 26 volt base station equipment.

IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 20 Watts

Power Gain — 17.9 dB

Efficiency — 28%

Adjacent Channel Power —

750 kHz: -45.0 dBc @ 30 kHz BW

1.98 MHz: -60.0 dBc @ 30 kHz BW

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW

Output Power

Features

• Internally Matched for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain-Source Voltage

- 0.5, +65

Vdc

Gate-Source Voltage

- 0.5, +15

Vdc

Derate above 25°C

250

1.43

W

W/°C

Storage Temperature Range

- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

200

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Case

0.7

°C/W

Document Number: MRF9085

Rev. 11, 5/2006

Freescale Semiconductor

Technical Data

MRF9085LR3

MRF9085LSR3

880 MHz, 90 W, 26 V

LATERAL N-CHANNEL

RF POWER MOSFETs

CASE 465-06, STYLE 1

NI-780

MRF9085LR3

CASE 465A-06, STYLE 1

NI-780S

MRF9085LSR3

© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.