M48T59 datasheet(24/32 Pages) STMICROELECTRONICS

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DC and AC parameters

M48T59, M48T59Y, M48T59V

24/32

Table 12.

Power down/up AC characteristics

Table 13.

Power down/up trip points DC characteristics

Symbol

Parameter(1)

Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5 V, 4.75 to 5.5 V, or 3.0 to 3.6 V

(except where noted).

Min

Max

Unit

tPD

E or W at VIH before power down

µs

(2)

VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring

until 200µs after VCC passes VPFD (min).

VPFD (max) to VPFD (min) VCC fall time

300

µs

tFB

(3)

VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.

VPFD (min) to VSS VCC fall time

µs

VPFD (min) to VPFD (max) VCC rise time

µs

tRB

VSS to VPFD (min) VCC rise time

µs

trec

VPFD (max) to RST high

200

Symbol

Parameter(1)(2)

Valid for ambient operating temperature: TA = 0 to 70°C; VCC = 4.5 to 5.5 V, 4.75 to 5.5 V, or 3.0 to 3.6 V

(except where noted).

All voltages referenced to VSS.

Min

Typ

Max

Unit

VPFD

Power-fail deselect voltage

M48T59

4.5

4.6

4.75

M48T59Y

4.2

4.35

4.5

M48T59V

2.7

2.9

3.0

VSO

Battery back-up switchover

voltage

M48T59/Y

3.0

M48T59V

VPFD –100mV

tDR

(3)

At 25°C, VCC = 0 V.

Expected data retention time

YEARS

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