L7809AB datasheet(22/56 Pages) STMICROELECTRONICS

22 / 56 page

Electrical characteristics

L78xx, L78xxC, L78xxAB, L78xxAC

22/56

Doc ID 2143 Rev 22

Refer to the test circuits, TJ = 0 to 125 °C, VI = 15 V, IO = 500 mA, CI = 0.33 µF, CO = 0.1 µF

unless otherwise specified.

Table 17.

Electrical characteristics of L7810C

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Output voltage

TJ = 25°C

9.6

10.4

Output voltage

IO = 5 mA to 1 A, VI = 12.5 to 23 V

9.5

10.5

Output voltage

IO = 1 A, VI = 23 to 26 V, TJ = 25°C

9.5

10.5

ΔV

(1)

Line regulation

VI = 12.5 to 26 V, TJ = 25°C

200

VI = 13.5 to 19 V, TJ = 25°C

100

ΔV

(1)

Load regulation

IO = 5 mA to 1.5 A, TJ = 25°C

200

IO = 250 to 750 mA, TJ = 25°C

100

Quiescent current

TJ = 25°C

ΔI

Quiescent current change

IO = 5 mA to 1 A

0.5

VI = 12.5 to 26 V

ΔV

O/ΔT

Output voltage drift

IO = 5 mA

-1

mV/°C

Output noise voltage

B = 10 Hz to 100 kHz, TJ = 25°C

µV/VO

SVR

Supply voltage rejection

VI = 13 to 23 V, f = 120 Hz

Dropout voltage

IO = 1 A, TJ = 25°C

Output resistance

f = 1 kHz

Isc

Short circuit current

VI = 35 V, TJ = 25°C

0.40

Iscp

Short circuit peak current

TJ = 25°C

2.2

Load and line regulation are specified at constant junction temperature. Changes in VO due to heating effects must be

taken into account separately. Pulse testing with low duty cycle is used.

L7809AB bảng dữ liệu(PDF) 22 Page - STMicroelectronics

L7809AB bảng dữ liệu(HTML) 22 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56

bảng dữ liệu tải về

Link URL