CLP200M_03 datasheet(15/21 Pages) STMICROELECTRONICS

tên linh kiện	CLP200M

Giải thích chi tiết về linh kiện	OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE

PDF	21 Pages

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15 / 21 page

Obsolete

Product(s)

- Obsolete

Product(s)

CLP200M

15/21

0.4

0.6

0.8

1.0

1.2

1.4

1.6

Rsense ( )

Ω

ISWOFF [Rsense] / ISWOFF [4

Ω]

Fig. 33 : Relative variation of switching-off current

versus RSENSE (between 3 and 10

Ω).

Fig. 34 : Residual current l1 after the CLP200M.

The residual current l1 is defined by its peak value

(IP) and its duration (

τ)@IP/2 .

Current surge input

Residual current

after the CLP200M

waveform(

µs)

IPP(A)

Peak cur-

rent

IP (A)

waveform

µs)

5/310

130A

positive surge

negative surge

4.2

1.1

0.5

TIPL

TIPS

GND

R sense

RINGL

RINGS

DUT

R = 50 Ohms

SURGE

GENERATOR

-48V

0.1

0.3

100

300

1000

0.98

1.00

1.02

1.04

1.06

1.08

1.10

1.12

dV/dt (V/µs)

VSWON / REF

Fig. 35 : Relative variation of switching-on voltage

versus dV/dt with an external resistor of 4

Ω.

-40

-20

0.85

0.90

0.95

1.00

1.05

1.10

Tj (°C)

VREF [Tj°C] / V

[25°C]

REF

Fig. 36 : Relative variation of internal reference

voltage versus junction temperature (ILG=1mA).

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