CLP200M_03 datasheet(13/21 Pages) STMICROELECTRONICS

13 / 21 page

Obsolete

Product(s)

- Obsolete

Product(s)

CLP200M

13/21

Symbol

Parameter

Test Conditions

Value

Unit

IPP

Line to GND peak surge

current

10/1000

µs (open circuit voltage

wave shape 10/1000

µs)

100

5/310

µs (open circuit voltage

wave shape 10/700

µs)

150

ITSM

Mains power induction

current

VRMS = 300V,R=600

Ω

t = 200ms

0.5

Mains power contact current

VRMS = 220V,R=10

Ω

(failure status threshold)

t = 200 ms

VRMS = 220V,R=600

Ω

t=15mn

0.30

Tstg

Storage temperature range

Maximum junction temperature

-40to + 150

150

°C

Maximum lead temperature for soldering during 10 s

260

°C

ABSOLUTE MAXIMUM RATINGS (RSENSE =4

Ω, and Tamb =25°C)

Symbol

Parameter

Test Conditions

Value

Unit

Min.

Max.

ILGL

Line to GND leakage

current

. VLG = 200 V

. Measured between TIP

(or RING) and GND

µA

Vref

Overvoltage internal refer-

ence

. ILG =1mA

. Measured between TIP

(or RING) and GND

215

VSWON

Line to GND voltage at SW1

or SW2 switching-on

. Measured at 50 Hz between

TIPL (or RINGL) and GND

290

ISWOFF

Line to GND current at SW1

or SW2 switching-off

. Refer to test circuit page 14

150

ISWON

Line current at SW1 or SW2

switching-on

. Positive pulse

. Negative pulse

180

220

280

320

Line to GND capacitance

. VLG =-1V+1VRMS

. F=1MHz

200

ELECTRICAL CHARACTERISTICS (RSENSE =4

Ω, and Tamb = 25°C)

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