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ADG5409 bảng dữ liệu(PDF) 7 Page - Analog Devices |
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ADG5409 bảng dữ liệu(HTML) 7 Page - Analog Devices |
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7 / 24 page ![]() ADG5408/ADG5409 Rev. 0 | Page 7 of 24 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments Drain Off Leakage, ID (Off ) ±0.15 nA typ VS = 1 V/30 V, VD = 30 V/1 V; see Figure 29 ±0.4 ±4 ±30 nA max Channel On Leakage, ID (On), IS (On) ±0.15 nA typ VS = VD = 1 V/30 V; see Figure 25 ±0.4 ±4 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 μA typ VIN = VGND or VDD ±0.1 μA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 187 ns typ RL = 300 Ω, CL = 35 pF 242 257 281 ns max VS = 18 V; see Figure 32 tON (EN) 160 ns typ RL = 300 Ω, CL = 35 pF 195 219 237 ns max VS = 18 V; see Figure 34 tOFF (EN) 147 ns typ RL = 300 Ω, CL = 35 pF 184 184 190 ns max VS = 18 V; see Figure 34 Break-Before-Make Time Delay, tD 53 ns typ RL = 300 Ω, CL = 35 pF 17 ns min VS1 = VS2 = 18 V; see Figure 33 Charge Injection, QINJ 150 pC typ VS = 18 V, RS = 0 Ω, CL = 1 nF; see Figure 35 Off Isolation −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 28 Channel-to-Channel Crosstalk −60 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 27 Total Harmonic Distortion + Noise 0.4 % typ RL = 1 kΩ, 18 V p-p, f = 20 Hz to 20 kHz; see Figure 30 −3 dB Bandwidth RL = 50 Ω, CL = 5 pF; see Figure 31 ADG5408 45 MHz typ ADG5409 76 MHz typ Insertion Loss −1 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 CS (Off ) 18 pF typ VS = 18 V, f = 1 MHz CD (Off ) ADG5408 120 pF typ VS = 18 V, f = 1 MHz ADG5409 60 pF typ VS = 18 V, f = 1 MHz CD (On), CS (On) ADG5408 137 pF typ VS = 18 V, f = 1 MHz ADG5409 80 pF typ VS = 18 V, f = 1 MHz POWER REQUIREMENTS VDD = 39.6 V IDD 80 μA typ Digital inputs = 0 V or VDD 100 130 μA max VDD 9/40 V min/V max GND = 0 V, VSS = 0 V 1 Guaranteed by design; not subject to production test. |
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