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PIC16F722-E/ML bảng dữ liệu(PDF) 219 Page - Microchip Technology

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© 2009 Microchip Technology Inc.
DS41341E-page 219
PIC16F72X/PIC16LF72X
Program Flash Memory
D130
EP
Cell Endurance
100
1k
—
E/W
Temperature during programming:
10°C
≤ TA ≤ 40°C
D131
VDD for Read
VMIN
——
V
Voltage on MCLR/VPP during
Erase/Program
8.0
—
9.0
V
Temperature during programming:
10°C
≤ TA ≤ 40°C
VDD for Bulk Erase
2.7
3
—
V
Temperature during programming:
10°C
≤ TA ≤ 40°C
D132
VPEW
VDD for Write or Row Erase
2.7
—
—
V
VMIN = Minimum operating voltage
VMAX = Maximum operating
voltage
IPPPGM
Current on MCLR/VPP during
Erase/Write
——
5.0
mA
Temperature during programming:
10°C
≤ TA ≤ 40°C
IDDPGM
Current on VDD during Erase/
Write
—
5.0
mA
Temperature during programming:
10°C
≤ TA ≤ 40°C
D133
TPEW
Erase/Write cycle time
—
2.8
ms
Temperature during programming:
10°C
≤ TA ≤ 40°C
D134
TRETD
Characteristic Retention
40
—
—
Year
Provided no other specifications
are violated
VCAP Capacitor Charging
D135
Charging current
—
200
—
μA
D135A
Source/sink capability when
charging complete
—0.0
—
mA
23.4
DC Characteristics: PIC16F72X/PIC16LF72X-I/E (Continued)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
≤ TA ≤ +85°C for industrial
-40°C
≤ TA ≤ +125°C for extended
Param
No.
Sym.
Characteristic
Min.
Typ†
Max.
Units
Conditions
Legend:
TBD = To Be Determined
*
These parameters are characterized but not tested.
†
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are
not tested.
Note 1: In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external
clock in RC mode.
2: Negative current is defined as current sourced by the pin.
3: The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent
normal operating conditions. Higher leakage current may be measured at different input voltages.
4: Including OSC2 in CLKOUT mode.



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