PMGD780SN_2

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Product data sheet

Rev. 02 — 19 April 2010

8 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel

μTrenchMOS standard level FET

Fig 12. Source current as a function of source-drain

voltage; typical values

Fig 13. Gate-source voltage as a function of gate

charge; typical values

03an91

0

0.2

0.4

0.6

0.8

1

0

0.3

0.6

0.9

1.2

(A)

°C

150

°C

03an93

0

2

4

6

8

10

0

0.3

0.6

0.9

1.2

(V)

°C