PMGD780SN_2

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 02 — 19 April 2010

6 of 14

NXP Semiconductors

PMGD780SN

Dual N-channel

μTrenchMOS standard level FET

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical

values

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values

Fig 8.

Normalized drain-source on-state resistance

as a function of junction temperature

03an88

0

0.5

1

1.5

2

0123

(A)

10

6

5

3.5

4

4.5

03an90

0

0.2

0.4

0.6

0.8

1

01

23

45

(A)

°C

25

°C

03an89

0

1

2

3

0

0.2

0.4

0.6

0.8

1

(

Ω)

10

6

5

4

4.5

−60

180

120

060

03aa28

1.2

0.6

1.8

2.4

a

0

a

R

DSon 25 C

°

()

-----------------------------

=