BCM856DSSLASHDG datasheet(5/14 Pages) NXP

5 / 14 page

BCM856BS_BCM856DS_1

Product data sheet

Rev. 01 — 7 August 2008

5 of 14

NXP Semiconductors

BCM856BS; BCM856DS

PNP/PNP matched double transistors

[1]

VBEsat decreases by about 1.7 mV/K with increasing temperature.

[2]

VBE decreases by about 2 mV/K with increasing temperature.

[3]

The smaller of the two values is taken as the numerator.

[4]

The smaller of the two values is subtracted from the larger value.

VBE

base-emitter voltage

VCE = −5V;

IC = −2mA

[2]

−600

−650

−700

VCE = −5V;

IC = −10 mA

[2] --

−760

collector capacitance

VCB = −10 V;

IE =ie =0A;

f=1MHz

2.2

emitter capacitance

VEB = −0.5 V;

IC =ic =0A;

f=1MHz

-10

transition frequency

VCE = −5V;

IC = −10 mA;

f = 100 MHz

100

175

MHz

noise ﬁgure

VCE = −5V;

IC = −0.2 mA;

RS =2kΩ;

f = 10 Hz to

15.7 kHz

1.6

VCE = −5V;

IC = −0.2 mA;

RS =2kΩ;

f = 1 kHz;

B = 200 Hz

3.1

Per device

hFE1/hFE2

hFE matching

VCE = −5V;

IC = −2mA

[3] 0.9

VBE1−VBE2 VBE matching

VCE = −5V;

IC = −2mA

[4] --2

Table 8.

Characteristics …continued

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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