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74ALVC32 bảng dữ liệu(PDF) 5 Page - NXP Semiconductors

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Giải thích chi tiết về linh kiện  Quad 2-input OR gate
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74ALVC32 bảng dữ liệu(HTML) 5 Page - NXP Semiconductors

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74ALVC32_2
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 02 — 10 December 2007
5 of 13
NXP Semiconductors
74ALVC32
Quad 2-input OR gate
[1]
All typical values are measured at VCC = 3.3 V (unless stated otherwise) and Tamb =25 °C.
10. Dynamic characteristics
[1]
Typical values are measured at Tamb =25 °C
[2]
tpd is the same as tPHL and tPLH.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
N = number of inputs switching
Σ(C
L × VCC
2
× f
o) = sum of the outputs
ICC
supply current
VCC = 3.6 V; VI =VCC or GND;
IO =0A
-
0.2
10
µA
∆ICC
additional supply current
per input pin; VCC = 3.0 V to 3.6 V;
VI =VCC − 0.6 V; IO =0A
-
5
750
µA
CI
input capacitance
-
3.5
-
pF
Table 6.
Static characteristics …continued
At recommended operating conditions. Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
−40 °C to +85 °C
Unit
Min
Typ[1]
Max
Table 7.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7.
Symbol
Parameter
Conditions
−40 °C to +85 °C
Unit
Min
Typ[1]
Max
tpd
propagation delay
CP to Qn; see Figure 6
[2]
VCC = 1.65 V to 1.95 V
1.0
2.8
4.7
ns
VCC = 2.3 V to 2.7 V
1.0
2.0
3.1
ns
VCC = 2.7 V
1.0
2.2
2.9
ns
VCC = 3.0 V to 3.6 V
1.0
2.0
2.8
ns
CPD
power dissipation
capacitance
per gate; VI = GND to VCC; VCC = 3.3 V
[3]
-25-
pF



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