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74ALVC32 bảng dữ liệu(PDF) 5 Page - NXP Semiconductors |
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74ALVC32 bảng dữ liệu(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page ![]() 74ALVC32_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 10 December 2007 5 of 13 NXP Semiconductors 74ALVC32 Quad 2-input OR gate [1] All typical values are measured at VCC = 3.3 V (unless stated otherwise) and Tamb =25 °C. 10. Dynamic characteristics [1] Typical values are measured at Tamb =25 °C [2] tpd is the same as tPHL and tPLH. [3] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of inputs switching Σ(C L × VCC 2 × f o) = sum of the outputs ICC supply current VCC = 3.6 V; VI =VCC or GND; IO =0A - 0.2 10 µA ∆ICC additional supply current per input pin; VCC = 3.0 V to 3.6 V; VI =VCC − 0.6 V; IO =0A - 5 750 µA CI input capacitance - 3.5 - pF Table 6. Static characteristics …continued At recommended operating conditions. Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions −40 °C to +85 °C Unit Min Typ[1] Max Table 7. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 7. Symbol Parameter Conditions −40 °C to +85 °C Unit Min Typ[1] Max tpd propagation delay CP to Qn; see Figure 6 [2] VCC = 1.65 V to 1.95 V 1.0 2.8 4.7 ns VCC = 2.3 V to 2.7 V 1.0 2.0 3.1 ns VCC = 2.7 V 1.0 2.2 2.9 ns VCC = 3.0 V to 3.6 V 1.0 2.0 2.8 ns CPD power dissipation capacitance per gate; VI = GND to VCC; VCC = 3.3 V [3] -25- pF |
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