SS8027G datasheet(2/10 Pages) SSC

2 / 10 page

www.SiliconStandard.com

2 of 10

5/26/2005 Rev.2.2

SS8027G

Absolute Maximum Ratings

(Note 1)

Input Voltage……………………….……………...................................................................……..……10V

Power Dissipation Internally Limited

(Note 2)

Maximum Junction Temperature.…..……………...............................................................………...150°C

Storage Temperature Range….……....................................................................................…...-65°C

≤ T

≤+150°C

Lead Temperature, Time for Wave Soldering

TO 220, TO 263 Package…………….........................................................................…..………..260°C, 10s

TO 252, SOT 223 Package………………….........................................................................………260°C, 4s

Continuous Power Dissipation (TA = +25°C)

SOT 223

(1) ……………………..................................................................………….………………....0.8W

TO 252

(1) ……………………………..................................................................….………………..….1.0W

TO 263

(1) ……………………………..................................................................….………………..….1.6W

TO 220

(1) ………………………….………..................................................................……………..….2.0W

Note

(1): See Recommended Minimum Footprint

Operating Conditions

(Note 1)

Input Voltage……………………………….....................................................................…………….4V~7V

Temperature Range………….…….........................................................................................……-40°C

≤ T

≤125°C

Electrical Characteristics

VIN =5V, IO = 1A, CIN = 1µF, COUT =10µF, All specifications apply for TA = TJ = 25°C. [Note 3]

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

Output Voltage

50mA < IO <1A

3.234

3.3

3.366

Line Regulation

4V < VIN < 7V, IO = 10mA

Load Regulation

50mA < IO < 1A

Output Impedance

200mA DC and 100mA AC, fo = 120Hz

100

Ω

Quiescent Current

VIN = 5V

0.6

Ripple Rejection

fi = 120Hz, 1VP-P, Io = 100mA

IO = 1A

0.8

Dropout Voltage

IO = 100mA

200

Short Circuit Current

1.6

1.9

Over Temperature

125

°C

Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Con-

ditions are conditions under which the device functions but the specifications might not be guaranteed.

For guaranteed specifications and test conditions see the Electrical Characteristics.

Note 2: The maximum power dissipation is a function of the maximum junction temperature, TJmax , total thermal

resistance,

JA, and ambient temperature TA. The maximum allowable power dissipation at any ambient

temperature is Tjmax-TA /

JA. If this dissipation is exceeded, the die temperature will rise above 150°C

and IC will go into thermal shutdown. For the SS8027G in the SOT-223 package,

JA is 156°C/W; in the

TO-252 package,

JA is 125°C/W; in the TO-263 package,

JA is 75°C/W, and in the TO-220 package,

JA is 60°C/W (no heat sink). [See Recommended Minimum Footprint] If the TO-220 package is used

with a heat sink,

JA is the sum of the package thermal resistance junction-to-case (

JC) of 3°C/W and

the thermal resistance added by the heat sink and thermal interface.The thermal resistance can be

reduced by increasing the P.C. board copper area thermally connected to the package. The safe op-

eration area of SOT-223, TO-252, TO-263 or TO-220 packages can be seen in “Typical Performance

Characteristics” (Safe Operating Area).

Note3: Low duty-cycle pulse techniques are used during test to maintain the junction temperature as close

to ambient temperature as possible.

Note4: The output capacitor should be a tantalum or aluminum type.

SS8027G bảng dữ liệu(PDF) 2 Page - Silicon Standard Corp.

SS8027G bảng dữ liệu(HTML) 2 Page - Silicon Standard Corp.

Html Pages

1 2 3 4 5 6 7 8 9 10

bảng dữ liệu tải về

Link URL