8

X28HT010

CE Controlled Write Cycle

Page Write Cycle

Notes: (5) Between successive byte writes within a page write operation,

OE can be strobed LOW: e.g. this can be done with CE and WE

HIGH to fetch data from another memory device within the system for the next write; or with

WE HIGH and CE LOW effectively

performing a polling operation.

(6) The timings shown above are unique to page write operations. Individual byte load operations within the page write must

conform to either the

CE or WE controlled write cycle timing.

6613 FHD F07

ADDRESS

tAS

tOEH

tWC

tAH

tOES

tWPH

tCS

tDV

tDS

tDH

tCH

CE

WE

OE

DATA IN

DATA OUT

HIGH Z

DATA VALID

tCW

6613 FHD F08

WE

OE

(5)

LAST BYTE

BYTE 0

BYTE 1

BYTE 2

BYTE n

BYTE n+1

BYTE n+2

tWP

tWPH

tBLC

tWC

CE

ADDRESS *

(6)

I/O

*For each successive write within the page write operation, A8–A16 should be the same or

writes to an unknown address could occur.