RT1A040ZP datasheet(2/6 Pages) ROHM

2 / 6 page

RT1A040ZP

Data Sheet

2/5

www.rohm.com

○

2009.01 - Rev.A

Electrical characteristics

(Ta=25

°C)

Parameter

Symbol

IGSS

Yfs

Min.

−−

±10

µAVGS=±10V, VDS=0V

VDD

−6V

Typ.

Max.

Unit

Conditions

Gate-source leakage

V(BR) DSS

−12

−−

VID=

−1mA, VGS=0V

Drain-source breakdown voltage

IDSS

−−

−1

µAVDS= −12V, VGS=0V

Zero gete voltage drain current

VGS (th)

−0.3

−−1.0

VDS=

−6V, ID= −1mA

Gate threshold voltage

−

ID=

−4A, VGS= −4.5V

Static drain-source on-state

resistance

RDS (on)

−

Ω

ID=

−2A, VGS= −2.5V

Forward transfer admittance

−

ID=

−2A, VGS= −1.8V

Input capacitance

6.5

−−

SVDS=

−6V, ID= −4A

Output capacitance

Ciss

−

2350

−

VDS=

−6V

Reverse transfer capacitance

Coss

−

310

280

−

VGS=0V

Turn-on delay time

Crss

−

f=1MHz

Rise time

td (on)

−

Turn-off delay time

−

380

−

Fall time

td (off)

−

210

−

4.0

−

Qgs

−

3.5

−

VGS=

−4.5V

1.5

Ω

RG=10

Ω

Qgd

−−

ID=

−4A

Ω

−

110

ID=

−0.8A, VGS= −1.5V

∗Pulsed

∗

Total gate charge

Gate-source charge

Gate-drain charge

VDD

−6V

ID=

−2A

VGS=

−4.5V

Ω

RG=10

Ω

Body diode characteristics

(Source -drain) (Ta=25

°C)

VSD

−−

−1.2

IS=

−4A, VGS=0V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗

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