IP4064CX8_IP4364CX8_IP4366CX8_2

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 02 — 11 February 2010

4 of 14

NXP Semiconductors

IP4064CX8; IP4364CX8; IP4366CX8

Integrated SIM card passive filter array with ESD protection

6.

Characteristics

[1]

Guaranteed by design.

7.

Application information

7.1 Application diagram

A typical application diagram showing IP4064CX8, IP4364CX8 or IP4366CX8 in a SIM

card interface is depicted in Figure 3. The 2 kV ESD compliant pins (A3, B3 and C3) are

connected to the baseband interface side while the four 15 kV ESD compliant pins (A2,

B1, C1 and C2) are connected to the SIM card.

Table 4.

Electrical characteristics

Symbol Parameter

Conditions

Min

Typ

Max

Unit

channel series resistance R1 and R3

75

100

125

Ω

R2

35.2

47.0

58.8

Ω

channel capacitance

including diode

capacitance;

[1]

IP4064CX8

14

17

20

pF

IP4364CX8

14

17

20

pF

IP4366CX8

8

10

12

pF

breakdown voltage

6

-

10

V

reverse leakage current

-

-

50

nA

Fig 3.

Typical application diagram

008aaa211

100

Ω

R1

47

Ω

R2

100

Ω

R3

RST

CLK

I/O

baseband

C2

A2

B1

C1

B2

A3

B3

C3

VSIM

SIM card

AUX2

AUX1

I/O

CLK

SPU

RST

GND

VCC