IP4064CX8_IP4364CX8_IP4366CX8_2

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 02 — 11 February 2010

3 of 14

NXP Semiconductors

IP4064CX8; IP4364CX8; IP4366CX8

Integrated SIM card passive filter array with ESD protection

4.

Functional diagram

5.

Limiting values

[1]

Device is qualified with 1000 pulses of

±15 kV contact discharges each, according to the IEC61000-4-2

model and far exceeds the specified level 4 (8 kV contact discharge).

Fig 2.

Schematic diagram

008aaa210

100

Ω

R1

47

Ω

R2

100

Ω

R3

A3

B3

C3

IEC61000-4-2

level 1

protection pins

IEC61000-4-2

level 4

protection pins

A2

C2

B1

C1

B2

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

input voltage

−0.5

+5.5

V

electrostatic discharge

voltage

pins A2, B1, C1 and C2

to ground

contact discharge

[1]

−15

+15

kV

air discharge

[1]

−15

+15

kV

IEC 61000-4-2 level 4;

pins A2, B1, C1 and C2

to ground

contact discharge

−8

+8

kV

air discharge

−15

+15

kV

IEC 61000-4-2 level 1;

pins A3, B3 and C3 to

ground

contact discharge

−2

+2

kV

air discharge

−2

+2

kV

channel power dissipation

continuous power;

-

60

mW

total power dissipation

continuous power;

-

180

mW

storage temperature

−55

+150

°C

10 s maximum

-

260

°C

ambient temperature

−35

+85

°C