MICROSDHC datasheet(3/25 Pages) TRANSCEND

3 / 25 page

miiic

rro

C C

rrd

d s

rriiie

High Capacity microSD Card

Transcend Information Inc.

Bus Operating Conditions

• General

Parameter

Symbol

Min.

Max.

Unit

Remark

Peak voltage on all lines

-0.3

VDD+0.3

All Inputs

Input Leakage Current

-10

µA

All Outputs

Output Leakage Current

-10

µA

• Power Supply Voltage

Parameter

Symbol

Min.

Max.

Unit

Remark

Supply voltage

VDD

2.7

3.6

Output High Voltage

VOH

0.75* VDD

IOH=-100uA@VDD Min.

Output Low Voltage

VOL

0.125* VDD

IOL=100uA@VDD Min.

Input High Voltage

VIH

0.625* VDD VDD+0.3

Input Low Voltage

VIL

VSS-0.3

0.25* VDD

Power up time

250

From 0v to VDD Min.

• Current Consumption

The current consumption is measured by averaging over 1 second.

‧

Before first command: Maximum 15 mA

‧

During initialization: Maximum 100 mA

‧

Operation in Default Mode: Maximum 100 mA

‧

Operation in High Speed Mode: Maximum 200 mA

‧

Operation with other functions: Maximum 500 mA.

• Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus

capacitance C US

itself and the capacitance CCARD of each card connected to this line:

L = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards.

Parameter

Symbol

Min.

Max.

Unit

Remark

Pull-up resistance

RCMD

RDAT

100

To prevent bus floating

Bus signal line capacitance

1 card

CHOST+CBUS shall not exceed

30 pF

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