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SE97TP bảng dữ liệu(PDF) 36 Page - NXP Semiconductors

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SE97TP bảng dữ liệu(HTML) 36 Page - NXP Semiconductors

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SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
36 of 55
NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
9.1 SE97 in memory module application
Figure 25 shows the SE97 being placed in the memory module application. The SE97 is
centered in the memory module to monitor the temperature of the DRAM and also to
provide a 2-kbit EEPROM as the Serial Presence Detect (SPD). In the event of
overheating, the SE97 triggers the EVENT output and the memory controller throttles the
memory bus to slow the DRAM. The memory controller can also read the SE97 and watch
the DRAM thermal behavior, taking preventive measures when necessary.
9.2 Layout consideration
The SE97 does not require any additional components other than the host controller to
read its temperature. It is recommended that a 0.1
μF bypass capacitor between the V
DD
and VSS pins is located as close as possible to the power and ground pins for noise
protection.
9.3 Thermal considerations
In general, self-heating is the result of power consumption and not a concern, especially
with the SE97, which consumes very low power. In the event the SDA and EVENT pins
are heavily loaded with small pull-up resistor values, self-heating affects temperature
accuracy by approximately 0.5
°C.
Equation 1 is the formula to calculate the effect of self-heating:
(1)
where:
ΔT = T
j − Tamb
Tj = junction temperature
Tamb = ambient temperature
Rth(j-a) = package thermal resistance
VDD = supply voltage
IDD(AV) = average supply current
Fig 25. System application
002aac800
SE97
EVENT
DIMM
DRAM
DRAM
DRAM
DRAM
MEMORY CONTROLLER
SMBus
CPU
ΔTR
th j-a
()
V
DD
I
DD AV
()
×
()
V
OL SDA
()
I
OL
k
sin
() SDA
()
×
()
V
OL EVENT
()
I
OL
k
sin
()EVENT
×
()
++
[
]
×
=



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