SEMIX503GB126HDS datasheet(2/6 Pages) SEMIKRON

2 / 6 page

SEMiX503GB126HDs

Rev. 16 – 16.12.2009

Characteristics

Symbol

Conditions

min.

typ.

max.

Unit

Inverse diode

VF = VEC

IF =300 A

VGE =0V

chip

Tj =25°C

1.6

1.80

Tj = 125 °C

1.6

1.8

VF0

Tj =25°C

0.9

1.1

Tj = 125 °C

0.7

0.8

0.9

Tj =25°C

1.7

2.0

2.3

mΩ

Tj = 125 °C

2.3

2.7

3.0

mΩ

IRRM

IF =300 A

di/dtoff = 6900 A/µs

VGE =-15 V

VCC = 600 V

Tj = 125 °C

400

Qrr

Tj = 125 °C

µC

Err

Tj = 125 °C

32.5

Rth(j-c)

per diode

0.13

K/W

Module

LCE

RCC'+EE'

res., terminal-chip

TC =25°C

0.7

mΩ

TC = 125 °C

1mΩ

Rth(c-s)

per module

0.04

K/W

to heat sink (M5)

to terminals (M6)

2.5

300

Temperatur Sensor

R100

Tc=100°C (R25=5 kΩ)

493 ± 5%

Ω

B100/125

R(T)=R100exp[B100/125(1/T-1/T100)];

T[K];

3550

±2%

SEMiX® 3s

Trench IGBT Modules

SEMiX503GB126HDs

Features

• Homogeneous Si

• Trench = Trenchgate technology

•VCE(sat) with positive temperature

coefficient

• High short circuit capability

• UL recognised file no. E63532

Typical Applications*

• AC inverter drives

•UPS

• Electronic Welding

Remarks

• Case temperatur limited to TC=125°C

max.

• Not for new design

SEMIX503GB126HDS bảng dữ liệu(PDF) 2 Page - Semikron International

SEMIX503GB126HDS bảng dữ liệu(HTML) 2 Page - Semikron International

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL