H7N1002LS datasheet(2/9 Pages) RENESAS

2 / 9 page

H7N1002LD, H7N1002LS, H7N1002LM

Preliminary

REJ03G1131-0800 Rev.8.00 Nov 13, 2009

Page 2 of 8

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

100

—

ID = 10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG = ±100 μA, VDS = 0

Gate to source leak current

IGSS

—

±10

μA

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

—

μA

VDS = 100 V, VGS = 0

Gate to source cutoff voltage

VGS (off)

1.5

—

2.5

ID = 1 mA, VDS = 10 V

Note 4

—

ID = 37.5 A, VGS = 10 V

Note 4

Static drain to source on state

resistance

RDS (on)

—

ID = 37.5 A, VGS = 4.5 V

Note 4

Forward transfer admittance

|yfs|

—

ID = 37.5 A, VDS = 10 V

Note 4

Input capacitance

Ciss

—

9700

—

Output capacitance

Coss

—

740

—

Reverse transfer capacitance

Crss

—

330

—

VDS = 10 V

VGS = 0

f = 1 MHz

Total gate charge

—

155

—

Gate to source charge

Qgs

—

Gate to drain charge

Qgd

—

VDD = 50 V

VGS = 10 V

ID = 75 A

Turn-on delay time

td (on)

—

Rise time

—

245

—

Turn-off delay time

td (off)

—

130

—

Fall time

—

VGS = 10 V, ID = 37.5 A

RL = 0.8 Ω

Rg = 4.7

Body to drain diode forward voltage

VDF

—

0.93

—

IF = 75 A, VGS = 0

Body to drain diode reverse recovery

time

trr

—

IF = 75 A, VGS = 0

diF/dt = 100 A/μs

Note:

4. Pulse test

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