SC9RS08KA2 datasheet(111/134 Pages) FREESCALE

111 / 134 page

Appendix A Electrical Characteristics

SC9RS08KA2 Series Data Sheet, Rev. 1

Freescale Semiconductor

111

PD = K ÷ (TJ + 273°C)

Eqn. A-2

Solving Equation A-1 and Equation A-2 for K gives:

K = PD × (TA + 273°C) + θJA × (PD)

Eqn. A-3

where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by

measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be

obtained by solving equations 1 and 2 iteratively for any value of TA.

A.4

Electrostatic Discharge (ESD) Protection Characteristics

Although damage from static discharge is much less common on these devices than on early CMOS

circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification

tests are performed to ensure that these devices can withstand exposure to reasonable levels of static

without suffering any permanent damage. All ESD testing is in conformity with CDF-AEC-Q00 Stress

Test Qualification for Automotive Grade Integrated Circuits. (http://www.aecouncil.com/) A device is

considered to have failed if, after exposure to ESD pulses, the device no longer meets the device

specification requirements. Complete dc parametric and functional testing is performed per the applicable

device specification at room temperature followed by hot temperature, unless specified otherwise in the

device specification.

A.5

DC Characteristics

This section includes information about power supply requirements, I/O pin characteristics, and power

supply current in various operating modes.

Table A-3. ESD Protection Characteristics

Parameter

Symbol

Value

Unit

ESD Target for Machine Model (MM)

MM circuit description

VTHMM

200

ESD Target for Human Body Model (HBM)

HBM circuit description

VTHHBM

2000

Table A-4. DC Characteristics

(Temperature Range = –40 to 85

°C Ambient)

Parameter

Symbol

Min

Typical

Max

Unit

Supply voltage (run, wait and stop modes.)

0 < fBus <10MHz

VDD

1.8

—

5.5

Minimum RAM retention supply voltage applied to VDD

VRAM

0.8 1

——

Low-voltage Detection threshold

(VDD falling)

(VDD rising)

VLVD

1.80

1.88

1.86

1.94

1.95

2.03

Power on RESET (POR) voltage

VPOR

0.9

1.4

1.7

Input high voltage (VDD > 2.3V) (all digital inputs)

VIH

0.70

× V

——

Input high voltage (1.8 V

≤ V

DD ≤ 2.3 V) (all digital inputs)

VIH

0.85

× V

——

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