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STM32F103CBT7XXX bảng dữ liệu(PDF) 54 Page - STMicroelectronics

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Electrical characteristics
STM32F103x8, STM32F103xB
54/92
Doc ID 13587 Rev 11
Table 29.
Flash memory endurance and data retention
5.3.10
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the
device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 30. They are based on the EMS levels and classes
defined in application note AN1709.
IDD
Supply current
Read mode
fHCLK = 72 MHz with 2 wait
states, VDD = 3.3 V
20
mA
Write / Erase modes
fHCLK = 72 MHz, VDD = 3.3 V
5mA
Power-down mode / Halt,
VDD = 3.0 to 3.6 V
50
µA
Vprog
Programming voltage
2
3.6
V
1.
Guaranteed by design, not tested in production.
Symbol
Parameter
Conditions
Value
Unit
Min(1)
1.
Based on characterization, not tested in production.
Typ
Max
NEND
Endurance
TA = –40 to +85 °C (6 suffix versions)
TA = –40 to +105 °C (7 suffix versions)
10
kcycles
tRET
Data retention
1 kcycle(2) at TA = 85 °C
2.
Cycling performed over the whole temperature range.
30
Years
1 kcycle(2) at TA = 105 °C
10
10 kcycles(2) at TA = 55 °C
20
Table 28.
Flash memory characteristics (continued)
Symbol
Parameter
Conditions
Min(1)
Typ
Max(1)
Unit



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