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STM32F103CBT7XXX bảng dữ liệu(PDF) 53 Page - STMicroelectronics |
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STM32F103CBT7XXX bảng dữ liệu(HTML) 53 Page - STMicroelectronics |
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53 / 92 page ![]() STM32F103x8, STM32F103xB Electrical characteristics Doc ID 13587 Rev 11 53/92 5.3.8 PLL characteristics The parameters given in Table 27 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = –40 to 105 °C unless otherwise specified. Table 26. Low-power mode wakeup timings Symbol Parameter Typ Unit tWUSLEEP (1) 1. The wakeup times are measured from the wakeup event to the point in which the user application code reads the first instruction. Wakeup from Sleep mode 1.8 µs tWUSTOP (1) Wakeup from Stop mode (regulator in run mode) 3.6 µs Wakeup from Stop mode (regulator in low power mode) 5.4 tWUSTDBY (1) Wakeup from Standby mode 50 µs Table 27. PLL characteristics Symbol Parameter Value Unit Min(1) 1. Based on characterization, not tested in production. Typ Max(1) fPLL_IN PLL input clock(2) 2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT. 18.0 25 MHz PLL input clock duty cycle 40 60 % fPLL_OUT PLL multiplier output clock 16 72 MHz tLOCK PLL lock time 200 µs Jitter Cycle-to-cycle jitter 300 ps Table 28. Flash memory characteristics Symbol Parameter Conditions Min(1) Typ Max(1) Unit tprog 16-bit programming time TA–40 to +105 °C 40 52.5 70 µs tERASE Page (1 KB) erase time TA –40 to +105 °C 20 40 ms tME Mass erase time TA –40 to +105 °C 20 40 ms |
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