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STM8L151C4T3 bảng dữ liệu(PDF) 72 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  8-bit ultralow power MCU, up to 32 KB Flash, 1 KB Data EEPROM RTC, LCD, timers, USART, I2C, SPI, ADC, DAC, comparators
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STM8L151C4T3 bảng dữ liệu(HTML) 72 Page - STMicroelectronics

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Electrical parameters
STM8L151xx, STM8L152xx
72/101
Doc ID 15962 Rev 2
Internal clock sources
Subject to general operating conditions for VDD, and TA.
High speed internal RC oscillator (HSI)
Low speed internal RC oscillator (LSI)
Table 28.
HSI oscillator characteristics (1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
VDD = 3.0 V
16
MHz
ACCHSI
Accuracy of HSI
oscillator (factory
calibrated)
VDD = 3.0 V, TA = 25 °C
-1 (2)
1 (2)
%
VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C
-1.5 (2)
1.5 (2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C
-2 (2)
2 (2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C
-2.5 (2)
2(2)
%
VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C
-4.5 (2)
2 (2)
%
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
-4.5
3
%
TRIM
HSI user trim
resolution
1.65 V
≤VDD ≤ 3.6 V,
-40 °C
≤TA ≤ 125 °C
±0.4 (2)
±0.5
%
tsu(HSI)
HSI oscillator setup
time (wakeup time)
3.7
7.4 (2)
µs
IDD(HSI)
HSI oscillator power
consumption
100
140 (2)
µA
1.
VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified.
2.
Data based on characterization results, not tested in production.
Table 29.
LSI oscillator characteristics (1)
1.
VDD = 1.8 V to 3.0 V, TA = -40 to 125 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
Frequency
26
38
56
kHz
tsu(LSI)
LSI oscillator wakeup time
TBD
TBD(2)
2.
Data based on characterization results, not tested in production.
µs
IDD(LSI)
LSI oscillator frequency
drift(3)
3.
This is a deviation for an individual part, once the initial frequency has been measured.
0 °C
≤TA ≤ 85 °C
-10
4
%



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