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STM8L151C4T3 bảng dữ liệu(PDF) 72 Page - STMicroelectronics |
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STM8L151C4T3 bảng dữ liệu(HTML) 72 Page - STMicroelectronics |
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72 / 101 page ![]() Electrical parameters STM8L151xx, STM8L152xx 72/101 Doc ID 15962 Rev 2 Internal clock sources Subject to general operating conditions for VDD, and TA. High speed internal RC oscillator (HSI) Low speed internal RC oscillator (LSI) Table 28. HSI oscillator characteristics (1) Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency VDD = 3.0 V 16 MHz ACCHSI Accuracy of HSI oscillator (factory calibrated) VDD = 3.0 V, TA = 25 °C -1 (2) 1 (2) % VDD = 3.0 V, 0 °C ≤TA ≤ 55 °C -1.5 (2) 1.5 (2) % VDD = 3.0 V, -10 °C ≤TA ≤ 70 °C -2 (2) 2 (2) % VDD = 3.0 V, -10 °C ≤TA ≤ 85 °C -2.5 (2) 2(2) % VDD = 3.0 V, -10 °C ≤TA ≤ 125 °C -4.5 (2) 2 (2) % 1.65 V ≤VDD ≤ 3.6 V, -40 °C ≤TA ≤ 125 °C -4.5 3 % TRIM HSI user trim resolution 1.65 V ≤VDD ≤ 3.6 V, -40 °C ≤TA ≤ 125 °C ±0.4 (2) ±0.5 % tsu(HSI) HSI oscillator setup time (wakeup time) 3.7 7.4 (2) µs IDD(HSI) HSI oscillator power consumption 100 140 (2) µA 1. VDD = 3.0 V, TA = -40 to 125 °C unless otherwise specified. 2. Data based on characterization results, not tested in production. Table 29. LSI oscillator characteristics (1) 1. VDD = 1.8 V to 3.0 V, TA = -40 to 125 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time TBD TBD(2) 2. Data based on characterization results, not tested in production. µs IDD(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -10 4 % |
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