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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
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AS4SD4M16DG-10/IT bảng dữ liệu(PDF) 24 Page - Austin Semiconductor |
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AS4SD4M16DG-10/IT bảng dữ liệu(HTML) 24 Page - Austin Semiconductor |
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24 / 50 page  SDRAM SDRAM SDRAM SDRAM SDRAM AS4SD4M16 AS4SD4M16 Rev. 2.1 6/05 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 24 Austin Semiconductor, Inc. WRITE with AUTO PRECHARGE 3. Interrupted by a READ (with or without AUTO PRECHARGE): A READ to bank m will interrupt a WRITE on bank n when registered, with the data-out appearing CAS latency later. The PRECHARGE to bank will begin after t WR is met, where t WR begins when the READ to bank m is registered. The last valid WRITE to bank n will be data-in registered one clock prior to the READ to bank m (Figure 26). 4 Interrupted by a WRITE (with or without AUTO PRECHARGE): A WRITE to bank m will interrupt a WRITE on bank n when registered. The PRECHARGE to bank n will begin after t WR is met, where t WR begins when the WRITE to bank m is registered. The last valid data WRITE to bank n will be data registered one clock prior to a WRITE to bank 1 (Figure 27). Figure 26 WRITE WITH AUTO PRECHARGE INTERRUPTED BY A READ NOTE: DQM is LOW. D IN a D IN a+1 D OUT d D OUT d+1 ADDRESS DQ 123456 123456 123456 123456 1234567 1234567 1234567 1234567 1234 1234 1234 1234 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123 123 123 123 123456 123456 123456 123456 1234567 1234567 1234567 1234567 1234 1234 1234 1234 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123 123 123 123 1234567 1234567 1234567 1234567 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123 123 123 123 BANK n, COL a BANK m, COL d t WR - BANK n 123456 123456 123456 123456 123456 123456 123456 123456 123 123 123 123 T0 T1 T2 T3 T4 T5 NOP NOP WRITE-AP BANK n NOP NOP CLK COMMAND T6 NOP T7 NOP WRITE-AP BANK m CAS Latency = 3 (BANK m) Page Active WRITE with burst of 4 Interrupt Burst, Write back Precharge READ with burst of 4 Page Active Internal States BANK n BANK m t RP -BANK n t RP -BANK m Figure 27 WRITE WITH AUTO PRECHARGE INTERRUPTED BY A WRITE NOTE: DQM is LOW. D IN a D IN a+1 ADDRESS DQ 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123 123 123 123 1234567 1234567 1234567 1234567 123456 123456 123456 123456 123 123 123 123 123456 123456 123456 123456 1234567 1234567 1234567 1234567 1234 1234 1234 1234 1234567 1234567 1234567 1234567 1234567 1234567 1234567 1234567 123 123 123 123 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123456 123456 123456 123456 123 123 123 123 BANK n, COL a BANK m, COL d t WR - BANK n 123456 123456 123456 123456 1234567 1234567 1234567 1234567 123 123 123 123 T0 T1 T2 T3 T4 T5 NOP NOP WRITE-AP BANK n NOP NOP CLK COMMAND T6 NOP T7 NOP WRITE-AP BANK m Page Active WRITE with burst of 4 Interrupt Burst, Write back Precharge WRITE with burst of 4 Page Active Internal States BANK n BANK m t RP -BANK n t WR -BANK m Write back D IN a+2 D IN d D IN d+1 D IN d+2 D IN d+3 123 123 123 123 Don’t Care |
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