APT30GP60B2DL datasheet(1/9 Pages) MICROSEMI

tên linh kiện	APT30GP60B2DL

Giải thích chi tiết về linh kiện	Resonant Mode Combi IGBT

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MAXIMUM RATINGS

All Ratings: T

C = 25°C unless otherwise speciﬁed.

CAUTION:

These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

STATIC ELECTRICAL CHARACTERISTICS

MIN

TYP

MAX

600

3

4.5

6

2.2

2.7

2.1

275

2750

±100

Characteristic / Test Conditions

Collector-Emitter Breakdown Voltage (V

GE = 0V, I C = 1.0mA)

Gate Threshold Voltage (V

CE = VGE, I C = 1mA, Tj = 25°C)

Collector-Emitter On Voltage (V

GE = 15V, IC = 30A, Tj = 25°C)

Collector-Emitter On Voltage (V

GE = 15V, IC = 30A, Tj = 125°C)

Collector Cut-off Current (V

CE = 600V, VGE = 0V, Tj = 25°C)

2

Collector Cut-off Current (V

CE = 600V, VGE = 0V, Tj = 125°C)

2

Gate-Emitter Leakage Current (V

GE = ±20V)

Symbol

BV

CES

V

GE(TH)

V

CE(ON)

I

CES

I

GES

Symbol

V

CES

V

GE

V

GEM

I

C1

I

C2

I

CM

SSOA

P

D

T

J,TSTG

T

L

Ratings

600

±20

±30

100

49

120

120A @ 600V

463

-55 to 150

300

Parameter

Collector-Emitter Voltage

Gate-Emitter Voltage

Gate-Emitter Voltage Transient

Continuous Collector Current @ T

C = 25°C

Continuous Collector Current @ T

C = 110°C

Pulsed Collector Current 1 @ T

C = 25°C

Switching Safe Operating Area @ T

J = 150°C

Total Power Dissipation

Operating and Storage Junction Temperature Range

Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.

The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high

voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high

frequency, high voltage switching applications and has been optimized for high frequency

switchmode power supplies.

Resonant Mode Combi IGBT®

C

E

G

Features

• Low Conduction Loss

• Low Gate Charge

• Ultrafast Tail Current shutoff

• Low forward Diode Voltage (V

F)

• Ultrasoft Recovery Diode

• SSOA Rated

• RoHS Compliant

Typical Applications

• Induction Heating

• Welding

• Medical

• High Power Telecom

• Resonant Mode Phase Shifted

Bridge

Microsemi Website - http://www.microsemi.com

UNIT

Volts

Amps

Watts

°C

Volts

UNIT

μA

nA

APT30GP60B2DL(G)

APT30GP60LDL(G)

600V, 30A, VCE(ON) = 2.2V Typical

G

C

E

G

C

E

Số phần tương tự - APT30GP60B2DL

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Advanced Power Technolo...	APT30GP60B	92Kb / 6P	POWER MOS 7 IGBT
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More results

Mô tả tương tự - APT30GP60B2DL

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