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APT30GP60B2DL bảng dữ liệu(PDF) 9 Page - Microsemi Corporation

tên linh kiện APT30GP60B2DL
Giải thích chi tiết về linh kiện  Resonant Mode Combi IGBT
PDF  9 Pages
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nhà sản xuất  MICROSEMI [Microsemi Corporation]
Trang chủ  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT30GP60B2DL bảng dữ liệu(HTML) 9 Page - Microsemi Corporation

  APT30GP60B2DL Datasheet HTML 1Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 2Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 3Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 4Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 5Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 6Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 7Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 8Page - Microsemi Corporation APT30GP60B2DL Datasheet HTML 9Page - Microsemi Corporation  
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Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
These dimensions are equal to the TO-247 without the mounting hole.
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Collector
Emitter
Gate
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Collector
Emitter
T-MAXTM (B2) Package Outline
TO-264 (L) Package Outline
4
3
1
2
5
5
Zero
1
2
3
4
di
F/dt - Rate of Diode Current Change Through Zero Crossing.
I
F - Forward Conduction Current
I
RRM - Maximum Reverse Recovery Current.
trr - Reverse Recovery Time, measured from zero crossing where diode
Qrr - Area Under the Curve Defined by IRRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
Figure 9. Diode Test Circuit
Figure 10, Diode Reverse Recovery Waveform and Definitions
0.25 IRRM
CURRENT
TRANSFORMER
di
F/dt Adjust
D.U.T.
+18V
0V
trr/Qrr
Waveform
Slope = diM/dt
6
diM/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
6
Vr
(Cathode)
(Anode)
(Cathode)
(Anode)



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