Any changing of specification will not be informed individual

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Elektronische Bauelemente

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

60

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

60

Vdc

Drain Current

– Continuous TC = 25°C (Note 1.)

– Pulsed (Note 2.)

ID

ID

IDM

±115

±75

±800

mAdc

Gate–Source Voltage

– Continuous

– Non–repetitive (tp ≤ 50 µs)

VGS

VGSM

±20

±40

Vdc

Vpk

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR–5 Board

(Note 3.) TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

Alumina Substrate,(Note 4.) TA = 25°C

Derate above 25

°C

PD

300

2.4

mW

mW/

°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ, Tstg

–55 to

+150

°C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

3. FR–5 = 1.0 x 0.75 x 0.062 in.

4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.

2

N–Channel

SOT–23

CASE 318

STYLE 21

025D

02 = Device Code 7002

MARKING DIAGRAM

& PIN ASSIGNMENT

3

2

1

Drain

Gate

2

1

3

Source

Small Signal MOSFET

115 mAMPS, 60VOLTS, RDS(on)=7.5

2N7002

N–Channel SOT–23

Small Signal MOSFET

115 mAmps, 60 Volts

RoHS Compliant Product

01-Jun-2002 Rev. A

Page 1 of 5

5 = Y ear 2005

D = Weeks A~z

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