2N6306 datasheet(2/3 Pages) ISC

tên linh kiện	2N6306

Giải thích chi tiết về linh kiện	Silicon NPN Power Transistors

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nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6306

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.1A ; IB=0

250

VCEsat-1

Collector-emitter saturation voltage

IC=3A; IB=0.6A

0.8

VCEsat-2

Collector-emitter saturation voltage

IC=8A; IB=2A

5.0

VBEsat

Base-emitter saturation voltage

IC=8A; IB=2A

2.3

VBE

Base-emitter on voltage

IC=3A ; VCE=5V

1.3

ICEV

Collector cut-off current

VCE=500V; VBE=-1.5V

0.5

ICEO

Collector cut-off current

VCE=250V; IB=0

0.5

IEBO

Emitter cut-off current

VEB=8V; IC=0

1.0

hFE-1

DC current gain

IC=3A ; VCE=5V

hFE -2

DC current gain

IC=8A ; VCE=5V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

250

Transition frequency

IC=0.3A ; VCE=10V;f=1MHz

MHz

Switching times

Rise time

0.6

μs

Storage time

1.6

μs

Fall time

VCC=125V; IC=3.0A; IB=0.6A

0.4

μs

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