IRF830FP datasheet(2/4 Pages) SUNTAC

2 / 4 page

IRF830

POWER MOSFET

Page 2

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, TJ = 25

CIRF830

Characteristic

Symbol

Min

Typ

Max

Units

Drain-Source Breakdown Voltage

(VGS = 0 V, ID = 250

V(BR)DSS

500

Drain-Source Leakage Current

(VDS = 500V, VGS = 0 V)

IDSS

Gate-Source Leakage Current-Forward

(Vgsf = 20 V, VDS = 0 V)

IGSSF

100

Gate-Source Leakage Current-Reverse

(Vgsr = -20 V, VDS = 0 V)

IGSSR

-100

Gate Threshold Voltage

(VDS = VGS, ID = 250

VGS(th)

2.0

4.0

Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 3)

RDS(on)

1.5

Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 3)

gFS

2.8

mhos

Input Capacitance

Ciss

520

730

Output Capacitance

Coss

170

240

Reverse Transfer Capacitance

(VDS = 25 V, VGS = 0 V,

f = 1.0 MHz)

Crss

Turn-On Delay Time

td(on)

7.0

Rise Time

9.0

Turn-Off Delay Time

td(off)

Fall Time

(VDD = 250 V, ID = 5 A,

RG = 9.1 , VGS = 10 V) (Note 3)

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

(VDS = 400V, ID = 5A

VGS = 10 V) (Note 3)

Qgd

Internal Drain Inductance

(Measured from the drain lead 0.25” from package to center of die)

4.5

Internal Drain Inductance

(Measured from the source lead 0.25” from package to source bond pad)

7.5

SOURCE-DRAIN DIODE CHARACTERISTICS

Reverse Recovery Charge

Qrr

1.8

µC

Forward Turn-On Time

ton

Reverse Recovery Time

IF = 5A, di/dt = 100A/µs , TJ = 25

trr

415

Diode Forward Voltage

IS = 5A, VGS = 0 V

VSD

1.5

Note

(1)

Repetitive rating; pulse width limited by max. junction temperature

(2)

VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25

(3)

Pulse.Test:.Duty Cycle

2% , Pulse.Width

300µs

** Negligible, Dominated by circuit inductance

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