VNB49N04 datasheet(4/14 Pages) STMICROELECTRONICS

tên linh kiện	VNB49N04

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VNP49N04FI / VNB49N04 / VNV49N04

SOURCE DRAIN DIODE

PROTECTIONS

(*) Pulsed: Pulse duration = 300

µs, duty cycle 1.5%

(**) Parameters guaranteed by design/characterization

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

VSD (*)

Forward On Voltage

ISD=25A; VIN=0V

1.8

trr (**)

Reverse Recovery Time

ISD=25A; di/dt=100A/µs

VDS=30V; Tj=25°C

(see test circuit, figure 5)

250

Qrr (**)

Reverse Recovery Charge

910

IRRM (**)

Reverse Recovery Current

7.5

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

ILIM

Drain Current Limit

VIN=10V; VDS=13V

VIN=5V; VDS=13V

tdlim (**)

Step Response Current

Limit

VIN=10V

VIN=5V

150

µs

Tjsh (**)

Overtemperature

Shutdown

150

°C

Tjrs (**)

Overtemperature Reset

135

°C

Igf (**)

Fault Sink Current

VIN=10V; VDS=13V

VIN=5V; VDS=13V

Eas (**)

Single Pulse

Avalanche Energy

Starting Tj=25°C; VDS=20V

VIN=10V; Rgen=1KΩ; L=6mH

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