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VNB49N04 bảng dữ liệu(PDF) 3 Page - STMicroelectronics

tên linh kiện VNB49N04
Giải thích chi tiết về linh kiện  "OMNIFET™ FULLY AUTOPROTECTED POWER MOSFET
PDF  14 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
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VNB49N04 bảng dữ liệu(HTML) 3 Page - STMicroelectronics

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VNP49N04FI / VNB49N04 / VNV49N04
THERMAL DATA
ELECTRICAL CHARACTERISTICS (-40
°C< T
j < 125°C, unless otherwise specified)
OFF
ON (*)
DYNAMIC
SWITCHING (**)
Symbol
Parameter
Value
Unit
PowerSO-10
D2PAK
ISOW ATT220
Rthj-case
Thermal Resistance Junction-case}}}
MAX
1
1
3.12
°C/W
Rthj-amb
Thermal Resistance Junction-ambient
MAX
50
62.5
62.5
°C/W
Symbol
Parameter
Test Condit ions
Min
Typ
Max
Unit
VCLAMP
Drain-source Clamp
Voltage
ID=200 mA; VIN=0
34
42
50
V
VCLTH
Drain-source Clamp
Threshold Voltage
ID=2mA; VIN=0
33
V
VINCL
Input-Source Reverse
Clamp Voltage
IIN= -1mA
-1.2
-0.1
V
IDSS
Zero Input Voltage Drain
Current (VIN=0V)
VDS=13V; VIN=0V
VDS=25V; VIN=0V
70
220
µA
µA
IISS
Supply Current from Input
Pin
VDS=0V; VIN=10V
250
550
µA
Symbol
Parameter
Test Condit ions
Min
Typ
Max
Unit
VIN(th)
Input Threshold Voltage
VDS=VIN; ID +IIN=1mA
0.8
3
V
RDS(on)
Static Drain-source On
Resistance
VIN=10V; ID=25A
VIN=5V; ID=25A
0.04
0.05
Ω
Ω
Symbol
Parameter
Test Condit ions
Min
Typ
Max
Unit
gfs (*)
Forward
Transconductance
VDS=13V; ID=25A; Tc=25°C
25
30
S
COSS
Output Capacitance
VDS=13V; f=1MHz; VIN=0V; Tc=25°C
1100
1500
pF
Symbol
Parameter
Test Condi tions
Min
Typ
Max
Unit
td(on)
Turn-on Delay Time
VDS=15V; ID=25A
Vgen=10V; Rgen=10 Ω
(see figure 3)
200
600
ns
tr
Rise Time
1300
3600
ns
td(off)
Turn-off Delay Time
800
2400
ns
tf
Fall Time
300
900
ns
td(on)
Turn-on Delay Time
VDS=15V; ID=25A
Vgen=10V; Rgen=1000Ω
(see figure 3)
1.3
3.8
µs
tr
Rise Time
3.8
10.4
µs
td(off)
Turn-off Delay Time
12
24
µs
tf
Fall Time
6.1
17
µs
(di/dt)on
Turn-on Current Slope
VDS=15V; ID=25A
VIN=10V; Rgen=10 Ω
25
A/
µs
Qi
Total Input Charge
VDS=15V; ID=25A; VIN=10V
100
nC
1



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