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TDF8553J bảng dữ liệu(PDF) 14 Page - NXP Semiconductors |
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TDF8553J bảng dữ liệu(HTML) 14 Page - NXP Semiconductors |
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14 / 47 page ![]() TDF8553J_1 © NXP B.V. 2008. All rights reserved. Objective data sheet Rev. 01 — 3 December 2008 14 of 47 NXP Semiconductors TDF8553J 4 × 50 Watt power amplifier and multiple voltage regulator 8.6.5 External DC-to-DC converter The VDCDC supply pin can be connected to an external DC-to-DC down converter (VO ≥ 5 V) to reduce the dissipation in regulator 3. If no external DC-to-DC converter is used, the VDCDC pin must be connected to VP. 8.6.6 Protection All regulator and switch outputs are fully protected by foldback current limiting against load dumps and short-circuits; see Figure 6. During a load dump all regulator outputs, except the output of regulators 2 and 6, will go low. The power switches can withstand ‘loss-of-ground’. This means that if pin GND becomes disconnected, the switch is protected by automatically connecting its outputs to ground. 8.6.7 Temperature protection If the junction temperature of a regulator becomes too high, the amplifier(s) are switched off to prevent unwanted noise signals being audible. A regulator junction temperature that is too high is indicated by pin DIAG going LOW and is also indicated by setting bit D6 in data byte DB2. If the junction temperature of the regulator continues to rise and reaches the maximum temperature protection level, all regulators and switches will be disabled except regulators 2 and 6. 8.7 I2C-bus specification Fig 6. Foldback current protection VREGn IOS IOlim IREGn 001aai698 Fig 7. Address byte mdb516 MSB LSB 0 = write 1 = read 1 1 0 1 1 0 0 R/W |
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